| 摘要 |
<p>PURPOSE: To prevent the deterioration or breakdown of a thin film transistor element due to electrostatic charges by forming a transparent semiconducting thin film on the surface of a glass substrate and then forming the thin film transistor element on the semiconducting thin film. CONSTITUTION: A thin film transistor is formed on a semiconducting thin film 11. This thin film transistor consists of a transistor gate electrode 4, gate insulating film 5, amorphous silicon film 6, drain electrode 7, source electrode 8, pixel electrode 9 and protective film 10. The transparent semiconducting thin film 11 is, 6 for example, an ITO film having 10<6>Ωsurface resistance. Before the thin film transistor element is formed, a thin film 11 is formed on the surface and sides of the glass substrate 1 by sputtering, and further a thin film 11 is also formed on the back surface by sputtering. Therefore, by forming the semiconducting thin film on the glass substrate 1 for the thin film transistor array substrate, the wave height of the discharge current caused by transfer of accumulated charges decreases when the array substrate is brought into contact with the ground. Thus, deterioration or breakdown of the element can be prevented.</p> |
