NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND DATA WRITING METHOD

摘要

PURPOSE: To provide a method of writing data in an NAND cell-type EEPROM which develops no miswriting. CONSTITUTION: A bit line voltage Vbit2 and a voltage of a selection gate SG1 are so set as root to electrically connect the source and drain diffusion layer of a non-write cell M8 connected to the same control gate CG4 with a write cell M4 to the potential of a bit line BL2 at data writing, and control gate voltages are given to control gates CG1 to CG3 so as to set the source-drain voltages VSD21 to VSD24 of non-selection cells not to erroneously erase data stored in memory cells M5 to M7 and to miswrite data in a memory cell M8 .