Method for preventing bit line-to-bit line leakage in the access transistor region of an AMG EPROM

摘要

The bit lines in an alternate-metal, virtual-ground (AMG) electrically programmable read-only-memory (EPROM), are formed by utilizing a plurality of field oxide regions and a plurality of pairs of dielectric/floating gate strips, which have the ends of each pair of strips connected together over a field oxide region, as an implant mask. By connecting together the ends of each pair of dielectric/floating gate strips, the width of the strips at the edges of the field oxide regions will remain constant. As a result, the isolation between adjacent bit lines, which is defined by the width of the strips, will also remain constant.