| 摘要 |
A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consist essentially of silicon, having a crystalline grain size which is smaller than polycrystalline with dopant atoms that are interstitial in the silicon. Process temperatures are limited such that the dopant atoms remain interstitial and do not become substitutional.
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