| 摘要 |
PURPOSE:To maintain electric balance in the lengths of fine connecting wirings on right and left sides and to hold high frequency, high output characteristics highly accurate by previously providing symmetrically at both sides of a transistor matching circuits of MOS capacitors to enhance input/output impedances. CONSTITUTION:When transistor parts 2a which operate as transistors are formed and an oxide film 5 is then grown on an Si substrate 7 as a passivation film, an oxide film 5 having a thickness corresponding to a capacitor capacity necessary to enhance input/output impedances is simultaneously grown on the side of a transistor 2a, and electrodes 6 are provided thereon as MOS capacitor parts 2b. Thus, the capacitor parts 2b are formed on the side of the transistor part 2a on one Si wafer, and diced while containing it in one chip. That is, characteristics are improved by avoiding the damage of a device without collapsing the electric balance at the transistor parts 2a on the right and left sides. |
