发明名称 Bias control circuit for an RF power amplifier
摘要 An active biasing circuit to provide linear operation of an RF power amplifier. A current generator circuit provides a current to the stages of the RF power amplifier. In the final power amplifier stage the current is applied to a bias control amplifier that includes a transistor connected as a diode. The transistor diode is connected through a resistor to the emitter of a bias control transistor, which is in turn connected to and controls the gate of a transistor power amplifier in the final power amplifier stage of the RF power amplifier with a bias current that is the highest current level needed for highest RF power. The transistor diode and the current generator circuit are also connected to bias control transistors in the other stages of the RF power amplifier such that the other stages are likewise controlled with the current from the current generator.
申请公布号 US5493255(A) 申请公布日期 1996.02.20
申请号 US19950407653 申请日期 1995.03.21
申请人 NOKIA MOBILE PHONES LTD. 发明人 MURTOJARVI, SIMO
分类号 H03G3/10;H03F1/02;H03F1/32;H03F3/19;H03F3/193;H03F3/24;(IPC1-7):H03F3/68 主分类号 H03G3/10
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