发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent short circuit between stack electrodes arranged on the opposite sides of a suspended part due to the residue being left in a recess between lower layer word lines after formation of the stack electrode through etching. CONSTITUTION:The clearance 38 at a suspended part provided for an electrode layer facing the contact holes at the suspended part is widened so that a recess 24 between lower layer word lines 1 is exposed to the clearance 38 at the suspended part. Since the etching residue after formation of a stack electrode is removed when the facing electrode layer 3 is overetched, short circuit is prevented.
申请公布号 JPH0846148(A) 申请公布日期 1996.02.16
申请号 JP19940175170 申请日期 1994.07.27
申请人 NEC KANSAI LTD 发明人 YAMAMOTO KO
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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