| 摘要 |
<p>PURPOSE:To produce a TFT substrate for an active matrix type liquid crystal display device which is wide in gaps between drain terminals and correspond to both side taking out of the terminals without increasing the number of photo- mask to be used. CONSTITUTION:The drain terminals 1 consisting of ITO films and first conductive films, drain buses 3 formed integrally with the drain terminals, gate terminals 2 and pixel electrodes 4 are formed on an insulating substrate and thereafter, mask members is selectively deposited on at least the drain buses 3 by an electrochemical deposition method of impressing voltages on at least the drain buses 3 and selectively depositing the mask members in the parts impressed with the voltages. The first conductive films are etched away with the mask members as a mask to expose the ITO films which are the lower layer conductive films of the pixel electrodes 4. The first conductive films on at least the drain terminals are partly etched away to expose the ITO films.</p> |
