Generally-diagonal mapping of address space for row/column organizer memories

摘要

A method for storing data in a generally-diagonal pattern in blocks of a flash EEPROM array by which the least number of memory cells are affected by a failure of either a row conductor or a column conductor, and apparatus for addressing the flash array to produce such a generally-diagonal storage pattern. The arrangement allows the simplest forms of error detection and correction circuitry to be utilized.