| 摘要 |
<p>PURPOSE:To obtain a hot field emission cathode in which an electron beam with its energy width of 0.5eV or less, its angular current density of 0.02mA/sr or more, and its variation ratio of 5% or less can be obtained and the method thereof. CONSTITUTION:In the case of hot field emission cathode provided with a covered layer consisting of zirconium and oxygen for a tungsten single crystal needle having its <100> axial direction, the tip end radius R1 is 1.2mum or more and 10mum or less, the flat section radius 2 in relation to the tip end radius is 0.2 or more, and the tapered angle theta is 25 deg. or less. And, by means of one or more kinds of method for making heat treatment in vacuum, a dry etching method, or a method in which gas is ionized by applying a voltage by using the tungsten single crystal needle as a cathode and discharging electrons, and etching is performed by means of the ion, the hot field emission cathode to control the shape of the acute part of the tungsten single crystal needle is manufactured. Thus, the hot field emission cathode which can be used for semiconductor inspection devices, etc., with its low acceleration SEM and high resolution SEM is obtained.</p> |
