Increasing the efficiency of III-V cpd. light- and radiation-emitting semiconductor chips

摘要

Process for increasing the efficiency of A(III)B(V) semiconductor chips is novel in that, before sepn., the active zone on the wafer is reduced and simultaneously an increase in surface area of the active zone (4) in this area occurs. Reduction of the active zone (4) is carried out by producing at least a second mesa (6) on the first mesa (5). The second mesa (6) is produced via an etching process using a phosphoric acid-contg. etchant mixt. The second mesa (6) remains held in place after sepn.. Along with producing a second mesa (6), a pine tree-shaped formation of the semiconductor surface is produced at its dividing part. The pine tree-shaped formation is produced by an ammoniacal etching mixt. The ammoniacal etching mixt. consists of 1 VT NH3 aqua and 5-30 VT H2O2 and is used at a temp. of 18-25 deg C.