Method for forming a metallic barrier layer

摘要

The present invention relates to methods for forming a TiNO metallic barrier layer acting as a diffusion barrier to intercept the diffusion of Si atoms between metal layers, the method including the steps of forming a TiN film through a sputtering equipment Using Ar and N2 gas; implanting N2O gas on the upper part of the TiN film; and annealing the resulting structure at N2 atmosphere for diffusing oxygen ions, thereby forming the resulting structure into uniform TiNO film. Alternatively, the oxygen atoms can be implanted into the TiN layer by exposure to an oxygen plasma. In another method a Ti film is implanted with oxygen atoms and the resulting structure is annealed in a N2 atmosphere.