| 摘要 |
PURPOSE:To improve sensitivity for reading a memory cell using a ferroelectric film and increase an operational speed. CONSTITUTION:When information stored in a ferroelectric capacitor FC is read, a transistor Tr is made a conduction state between the drain and the source, voltage '0' is applied to the one electrode of the FC. Also, voltage (Vcc+Vup) in which voltage (Vup) compensating voltage drop due to capacity of a bit line capacitor BC is added to the reference voltage Vcc is applied to a plate line. Consequently, voltage 'Vcc' is applied to the FC by voltage drop due to a bit line capacity Cb. |
