| 摘要 |
A thyristor type surge protector having a breakdown voltage VBO approximately equal to a surge clamping voltage VCL includes a P-type first semiconductor layer, an N-type second semiconductor layer provided in one surface of the first semiconductor layer, a P-type third semiconductor layer provided in the second semiconductor layer so as to provide at least one first exposed region of the second semiconductor layer, and an N-type fourth semiconductor layer formed in the other surface of the first semiconductor layer so as to provide at least one exposed region of said first semiconductor layer, a first electrode provided over the third semiconductor layer and of the first exposed region, and a second electrode provided over the fourth semiconductor layer and second exposed region.
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