MULTILAYER METALIZING METHOD OF SEMICONDUCTOR DEVICE

摘要

forming the first metal pattern after depositing the metal layer on a silicon substrate; forming a connecting metal layer by patterning as a reactive ion etching using gases of CI species as the metal layer after depositing the etching stop layer and metal layer on the silicon substrate where the first metal layer is formed; processing as SF6 gas to eliminate exposed part of the etching stop layer simultaneously as eliminating the gas of CI species; exposing the upper part of connecting metal layer by flattening the interlayer insulating film after depositing the interlayer insulating film on the whole surface; forming a pattern of the second metal layer after depositing the metal layer on top of interlayer insulating film and connecting metal layer.