Semiconductor device

摘要

Semiconductor device comprises: (a) a semiconductor substrate (11); (b) a gate insulating layer (13a) formed on the substrate; (c) a gate electrode (13b-d) formed layer (13a); (d) a side wall insulation layer (14) formed along one side wall of the gate insulating layer (13a) and gate electrode (13b-d); (e) a side wall conductor layer (15) formed bordering the side wall insulation layer (14); (f) a source-drain region (16) formed in the side wall conductor films (15) on both sides of the gate electrodes (13b,13c,13d), in a surface region of the substrate below the side wall conductor layer (15) and in a surface region of the substrate (11) bordering the side wall conductor layer (15); (g) an impurity concn. in a depth direction of the substrate (11) having a max. value at a required depth, where the surface of the conductor layer (15) acts as starting point and the concn. decreases in a section lower than the predetermined depth. Prodn. of the semiconductor device is also claimed.