发明名称 Memory device including DRAMs for high-speed accessing
摘要 A memory device comprises a dynamic random access memory (DRAM) organized by page and a memory access devices. The DRAM corresponding to the pages is divided into a plurality of groups each constituted of pages for storing data which are unlikely to give rise to interference between pages. The DRAM of each group is constituted as a memory system which responds to page access. The memory access devices are provided separately for the memory system of each group. Each memory access device has a memory means which, in response to an access designating a page address of the memory system associated therewith, stores an old page address designated at least one access earlier, and judging means which, in response to said page address access, judges whether or not the new page address designated by said access coincides with said old page address stored in said storage means. Page access is conducted in accordance with the old address if the judging means judges that the old and new page addresses coincide and is conducted in accordance with the new address after changing the page to be accessed to said new page if the old and new page addresses do not coincide.
申请公布号 US5479635(A) 申请公布日期 1995.12.26
申请号 US19940282485 申请日期 1994.08.01
申请人 HITACHI, LTD. 发明人 KAMETANI, MASATSUGU
分类号 G06F9/34;G06F12/02;G06F12/06;G11C7/10;G11C11/406;G11C11/4096;(IPC1-7):G06F12/00;G11C7/00;G11C8/00 主分类号 G06F9/34
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