Integrated circuit chip supported by a handle wafer and provided with means to maintain the handle wafer potential at a desired level

摘要

An SOI/DI IC chip including a handle wafer in the form of a section of silicon substrate contiguous with the layer of insulation beneath the silicon slice containing the device regions separated by trenches filled with low-conductivity polysilicon dielectric. One of the trenches is etched through the layer of insulation, and the polysilicon in that trench is doped to provide desired electrical conductivity to establish electrical contact with the handle wafer. Metallization is applied over the top of this one trench to make possible electrical connection to the handle wafer from above the chip by use of conventional wiring techniques.