| 摘要 |
<p>The present invention relates to a semiconductor device comprising at least one pn-junction (2) in which both a p-conducting layer (1) and an n-conducting layer (3) of the pn-junction (2) are in the form of doped layers of silicon carbide (SiC) and in which one of these layers consists of a voltage-absorbing layer (3) with low doping concentration, wherein at least the voltage-absorbing layer (3) of the pn-junction (2) exhibits a crystal structure in 6H-SiC where the [0001]-direction of the SiC crystal is oriented so that it deviates from the main current direction (7) in a current flowing through the crystal when the device is in conducting state. The conducting ability of the device is thus improved when it is in conducting state.</p> |
