Prodn. of silicon carbide protective layer

摘要

Prodn. of a SiC protective layer comprises applying a SiO2 layer directly on the graphite and/or C-fibre surface by treating above 800 deg C in vacuum, and suctioning off the CO formed. The SiO2 is applied in crystalline form, or in form of metal acid esters, which are chemically converted to SiO2, or as combination of both variants in the form of a slip. C-fibres are protected by a SiC coating, before inserting into a SiC matrix, and before further infiltration with liq. or gaseous Si before recrystallisation and destruction. Partially graphited materials are provided with a SiC (intermediate) layer and/or, in a further step, with a SiC slip or pressed SiC granules.