发明名称 |
PHOTOMASK AND ITS PRODUCTION |
摘要 |
PURPOSE:To provide a halftone phase shift mask with which reflected light of sufficient intensity is obtainable in order to position a photomask from alignment marks and a process for producing such photomask. CONSTITUTION:This photomask has a transparent substrate 6 which is transparent to exposing light, translucent films which are formed in first regions including at least regions 4 forming the patterns to be transferred on the surface of this transparent substrate 6 and reflection films 1 which are formed in second regions including regions 5 for forming the alignment marks for the purpose of at least positioning of the mask among the regions exclusive of the first regions on the surface of the transparent substrate 6 and afford the reflectivity of the exposing light of >=2 times the reflectivity on the exposed transparent substrate 6. |
申请公布号 |
JPH07319148(A) |
申请公布日期 |
1995.12.08 |
申请号 |
JP19940106399 |
申请日期 |
1994.05.20 |
申请人 |
FUJITSU LTD |
发明人 |
AZUMA TORU;HAIRI ISAMU;CHIJIMATSU TATSUO;KAWAKAMI KENICHI |
分类号 |
G03F1/32;G03F1/42;G03F1/52;G03F1/68;H01L21/027 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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