发明名称 PHOTOMASK AND ITS PRODUCTION
摘要 PURPOSE:To provide a halftone phase shift mask with which reflected light of sufficient intensity is obtainable in order to position a photomask from alignment marks and a process for producing such photomask. CONSTITUTION:This photomask has a transparent substrate 6 which is transparent to exposing light, translucent films which are formed in first regions including at least regions 4 forming the patterns to be transferred on the surface of this transparent substrate 6 and reflection films 1 which are formed in second regions including regions 5 for forming the alignment marks for the purpose of at least positioning of the mask among the regions exclusive of the first regions on the surface of the transparent substrate 6 and afford the reflectivity of the exposing light of >=2 times the reflectivity on the exposed transparent substrate 6.
申请公布号 JPH07319148(A) 申请公布日期 1995.12.08
申请号 JP19940106399 申请日期 1994.05.20
申请人 FUJITSU LTD 发明人 AZUMA TORU;HAIRI ISAMU;CHIJIMATSU TATSUO;KAWAKAMI KENICHI
分类号 G03F1/32;G03F1/42;G03F1/52;G03F1/68;H01L21/027 主分类号 G03F1/32
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