发明名称 LEAD FRAME FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
摘要 PURPOSE:To make it possible to carry out wire bonding with an Au or Cu wire without a bad effect caused by a very small amount of sulfur, by rolling a pure copper layer all over and reducing a ratio of activation. CONSTITUTION:A lead frame comprises a base material made of copper allay and a pure copper layer on a surface of the base material. The pure copper layer is formed in a glossy or semi-glossy copper plating step and subjected to cold working. The surface of the pure copper layer has a peak intensity ratio of 0.01 or below in S2P spectre to Cu2P spectre in a X-ray photo-electron spectral analysis, and at the same time a residual plating-crystal region on the pure copper surface is 1% or below on an area-rate basis. In the glossy or semi-glossy copper plating step, an additive including no sulfur is used. After the cool working step, the pure copper layer is treated by heat at a temperature of 100 deg.C or above and the surface thereof is ground to complete the lead frame.
申请公布号 JPH07321269(A) 申请公布日期 1995.12.08
申请号 JP19940110007 申请日期 1994.05.24
申请人 KOBE STEEL LTD 发明人 SAKAMOTO HIROSHI;HARA TOSHIHISA;NAKAJIMA YASUHIRO
分类号 C25D7/00;C25D7/12;H01L23/50 主分类号 C25D7/00
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