| 摘要 |
<p>PURPOSE:To stabilize a contact resistance by specifying a thickness of an oxide film provided to an upper side of an Al alloy layer and by specifying a contact resistance with a via. CONSTITUTION:An Si wafer 2 is heated at 1000 deg.C in oxygen atmosphere and an SiO2 layer 1 is formed on the wafer 2 to a thickness of 0.8mum. The wafer 2 is loaded to a sputter device provided with a load lock. After environmental atmosphere is replaced by argon first, evacuation is carried out, and Ti is formed 200Angstrom thick and TiN is formed 1000Angstrom thick in a first sputter chamber and a barrier layer 4 consisting of approximately TiN/Ti is formed. Then after Al-1%Si-0.5% Cu is made to grow to a thickness of approximately 0.8mum in a second sputter chamber, it is left for three hours in a dust-free chamber held at a temperature of 25 deg.C and a humidity of 30% for forming an oxide film 12 whose film thickness is 25Angstrom or less and contact resistance becomes about 2OMEGA on an Al alloy layer 5. Thereby, a contact resistance can be made stable.</p> |
