MOSFET WITH NOT UNIFORMED DOPPING CHANNEL USING TRENCH STRUCTURE

摘要

a source region(4a) and a drain region(4b) formed on a semiconductor substrate(1); a gate oxide film(12) positioned between the source region(4a) and the drain region(4b), and formed in a trench of the substrate(1); an asymmetric gate electrode(6) formed on the gate oxide film(12); a high concentration impurity region(10) adjacent to the drain region(4b) of the gate electrode side, and positioned at lower end of the gate electrode(6); and a source electrode(7a) and a drain electrode(7b) respectively connected to the source region(4a) and the drain region(4b).