| 摘要 |
Dielectrically isolated trench fill material is used for the formation of one or more isolated resistor elements within respective ones of a plurality of dielectrically isolated island components in which circuit devices are formed, or in adjacent substrate material. A respective island may have a plurality of trench strip resistor devices, which may have the same or differing resistor values depending upon their geometries or doping concentrations. In addition, the resistor-containing architecture may include one or more conductive cross-unders each defined by a respective cross-under trench strip. A cross-under trench strip contains conductive material, such as heavily doped polysilicon, as opposed to lightly doped polysilicon of the resistor fill material.
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