发明名称 |
Method of manufacturing trench capacitor with a recessed field oxide layer |
摘要 |
A capacitor of a semiconductor device has a plate electrode which process margin and a method of manufacturing same are disclosed. The plate electrode has a planarized surface and borders a source region. A recessed field oxide layer defining an active region is formed on a semiconductor substrate. Then, an insulating pattern for self-aligning an electrode is formed on the active region. The insulating pattern has a step with respect to the field oxide layer. Thereafter, a trench is formed in the semiconductor substrate by partially removing the field oxide layer, the insulating pattern and a surface portion of the semiconductor substrate. A conductive material is deposited on the semiconductor substrate having the trench and the insulating pattern to form a conductive layer filling the trench. Then, the conductive layer is polished until the insulating pattern is exposed, to thereby obtain an electrode having a planarized surface. The plate electrode does not unnecessarily occupy space of the active region and the plate electrode bordering the active region can be formed by self-alignment with a step between the insulating pattern and the field oxide layer. Therefore, sufficient process margin is provided to generate high yields, and a highly integrated semiconductor device having an AST cell can be realized.
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申请公布号 |
US5466628(A) |
申请公布日期 |
1995.11.14 |
申请号 |
US19940272528 |
申请日期 |
1994.07.11 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
LEE, JOO-YOUNG;LEE, KYU-PIL |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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