| 摘要 |
PURPOSE:To prevent increase of resistance, roughening of surface, and lowering of transmittance due to damage caused by extraction of oxygen atom by subjecting a gas containing hydrogenated silicon gas to plasma decomposition using ultrashort waves of specific frequency thereby depositing a silicon based semiconductor film having a specific bright conductivity on a substrate having a specific melting point. CONSTITUTION:A gas containing hydrogenated silicon gas is subjected to plasma decomposition using unltrashort waves having frequency of 30-300MHz thus depositing a silicon based semiconductor film on a substrate. When a silicon carbide film is deposited, a mixture gas of hydrogenated silicon gas and hydrocarbon gas is used. Consequently, the bright conductivity can be set at 5X10<6>S/cm or above even on a substrate having melting point of 240 deg. or below when it is undoped. A film having a wide optical band gap can be deposited on a doped substrate. |
