Method of manufacturing integrated circuit and integrated circuit made thereby.

摘要

An integrated circuit is manufactured by forming first and second regions on silicon dioxide (4, 6) on a semiconductor substrate (1). The first and second regions comprise a polycrystalline silicon layer (7), an insulating layer (8), and a polycrystalline silicon layer (9). The layers (8) and (9) are removed from the second regions and a second insulating layer (10) formed on the second regions. A third polycrystalline layer (11) is formed on the first and second regions. The first regions may be formed as EPROM memory cells and the second regions as capacitors.