| 发明名称 |
Oxynitride-dioxide composite gate dielectric process for MOS manufacture |
| 摘要 |
A method for making gate dielectrics for MOS devices includes first forming a silicon oxynitride layer, and then forming a silicon dioxide layer that underlies the oxynitride layer. The oxynitride layer functions as a membrane for controlled diffusion of oxygen to the oxidation region of the silicon substrate.
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| 申请公布号 |
US5464783(A) |
申请公布日期 |
1995.11.07 |
| 申请号 |
US19950382956 |
申请日期 |
1995.02.02 |
| 申请人 |
AT&T CORP. |
发明人 |
KIM, YOUNG O.;MANCHANDA, LALITA;WEBER, GARY R. |
| 分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L29/51;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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