Method of fabricating defect-free silicon on an insulating substrate

摘要

A method for fabricating silicon on insulator structures having a dislocation free silicon layer. The method utilizes low temperature UHVCVD to deposit a very heavily doped etch stop layer having a very steep doping profile onto a substrate and a lightly doped active layer onto the etch stop layer. An insulator is formed on the active layer and a carrier wafer is formed on the insulator layer. The original substrate is removed in a first etch and the etch stop layer is removed in a second etch resulting in a thin, uniform active layer. In one embodiment, a small percentage of germanium is added to the etch stop layer to produce a defect free epitaxial active layer.