发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To make a semiconductor wafer thin by grinding its rear keeping it high in mechanical and physical strength even if it is large in diameter by a method wherein the semiconductor wafer is divided into a few pieces before its rear is ground. CONSTITUTION:A semiconductor wafer 1 previously subjected to an element circuit forming process is subjected to a final check, and then chips are subjected to a testing process. After testing, the semiconductor wafer 1 is divided into a few pieces by cutting. The wafer 1 is cut by a diamond cutter through a scribing method or by a laser cutter through a fusion cutting method or by a diamond grinding stone through a dicing method, and the semiconductor wafer 1 is divided into four pieces. After the wafer 1 is cut, the element circuit forming surface of the wafer 1 is pasted on a fixing member 3 and fixed, and the rear of the semiconductor wafer 1 is ground by a grinder 2. The semiconductor wafer 1 split into four pieces is set on a grinder 2 and ground optional in thickness.</p>
申请公布号 JPH07283179(A) 申请公布日期 1995.10.27
申请号 JP19940074612 申请日期 1994.04.13
申请人 HITACHI LTD;HITACHI HOKKAI SEMICONDUCTOR LTD 发明人 TEZUKA ATSUSHI
分类号 H01L21/66;H01L21/301;H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/66
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