| 摘要 |
<p>A semiconductor booster circuit includes: a plurality of stages, each having a first MOS transistor (Q1, Q3, Q5, Q7, Q9) and a first capacitor (C1, C3, C5, C7, C9) having one terminal connected to a drain terminal of the first MOS transistor, the stages being connected in series by connecting the first MOS transistors of the stages in cascade; and at least one of a first arrangement wherein a source terminal of the first MOS transistor of each of the stages is electrically connected to its substrate, and the substrates of the first MOS transistors in the plurality of stages are electrically insulated from one another, and a second arrangement wherein one terminal of a second capacitor (C2, C4, C6, C8, C10) is connected to a gate terminal of the first MOS transistor of each of the stages, and a first clock signal generating unit (12) for inputting a first clock signal to the other terminal of the first capacitor in each stage and a second clock signal generating unit (14, 16) for inputting a second clock signal having a larger amplitude than a power supply voltage (Vdd) to the other terminal of the second capacitor, in each stage are provided. <IMAGE></p> |
