发明名称 SPUTTERING TARGET AND METHOD FOR MAKING THE SAME
摘要 In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented. <IMAGE>
申请公布号 KR950012811(B1) 申请公布日期 1995.10.21
申请号 KR19930001670 申请日期 1993.02.05
申请人 TOSHIBA CORP. 发明人 SATOU, MICHIO;YAMANOBE, TAKASHI;ISHIGAMI, TAKASHI;KAWAI, MITUO;YAJI, NORIAKI;MAKI, TOSHIHIRO;OBATA, MINORU;ANDO, SHIGERU
分类号 B22F3/14;C04B35/58;C22C1/05;C23C14/06;C23C14/34;H01L21/28;H01L21/285;(IPC1-7):C23C14/34 主分类号 B22F3/14
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