| 摘要 |
<p>A magnetoresistive sensor system (200) including a sensor (100) that can achieve high magnetoresistances. The sensor (100) includes at least one insulating pinning layer (104). In a first embodiment, the sensor (100) is asymmetric with one insulating pinning layer (104) and one conducting pinning layer (116). In a second embodiment, the sensor (100) has two insulating pinning layers (104). In a third embodiment (150), there are more ferromagnetic layers than the first and the second embodiments. The third embodiment has at least one insulating pinning layer, with each ferromagnetic layer separated from another ferromagnetic layer by at least one non-magnetic layer. The insulating pinning layer (104) is preferably made of at least one layer of a material selected from the group including nickel oxide, cobalt oxide, nickel oxide-cobalt oxide alloys, and alpha-phase ferric oxide. The conducting pinning layer (116) is preferably made of at least one layer of a material selected from the group of manganese-iron, manganese-nickel, manganese-nickel-iron and a material with a coercivity much higher than the coercivity of at least one of the ferromagnetic layers in the sensor (100). <IMAGE></p> |
