| 摘要 |
<p>Disclosed is a method of fabricating a stoichiometric gallium oxide (Ga2O3) thin film with dielectric properties on at least a portion of a semiconducting, insulating or metallic substrate. The method comprises electron-beam evaporation of single crystal, high purity Gd3Ga5O12 complex compound combining relatively ionic oxide, such as Gd2O3, with the more covalent oxide Ga2O3 such as to deposit a uniform, homogeneous, dense Ga2O3 thin film with dielectric properties on a variety of said substrates, the semiconducting substrates including III-V and II-VI compound semiconductors.</p> |
