发明名称 MASK DEFECT CORRECTING METHOD AND MASK DEFECT CORRECTING DEVICE
摘要 PURPOSE:To correct chromium defect without resticking of the chromium or damage on a substrate even if the defect is large. CONSTITUTION:Aluminum piece 8 is stuck to the isolated chromium defect 6 on a mask and this mask is immersed in sulfuric acid. The aluminum piece 8 elutes in this sulfuric acid in the form of ions. The naturally oxidized film on the surface of the chromium defect in contact with the aluminum piece 8 is reduced to chromium 9 by the electrons made to remain at this time, thereby the film is eventually dissolved into the sulfuric acid. Further, this chromium is eluted into a sulfuric acid tank, thereby, the electrons are made to remain and the reduction of the naturally oxidized film of the chromium is successively spread. All the chromium defects are thus dissolved into the sulfuric acid and the chromium defects are corrected.
申请公布号 JPH07261374(A) 申请公布日期 1995.10.13
申请号 JP19940047360 申请日期 1994.03.17
申请人 MATSUSHITA ELECTRON CORP 发明人 OOKA MASATO
分类号 G03F1/72;H01L21/027 主分类号 G03F1/72
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