| 摘要 |
PURPOSE:To obtain an electronic circuit device, that constitutes a highly reliable memory, of large capacity at low casts by forming an insulation body between two conductors, constituting one of the conductors with a metal or metal compound, and constituting the insulation body with an oxide or nitride of metal or metal compound. CONSTITUTION:Between a lower electrode 101 and an upper electrode 103, a compound film 102 exists. The film 102 is destructed when the voltage applied between the lower electrode 101 and the upper electrode 103 exceeds a specified value, and the resistance between the upper and lower electrodes changes from high to low. Once it comes into low resistance, it never restores itself into high resistance. Here, at least one of the lower electrode 101 or the upper electrode 103 is constituted with metal or metal compound. The film 102 is constituted with an oxide or nitride of metal or metal compound. |
