| 摘要 |
<p>PURPOSE:To provide a thin film transistor, having little damage on an insulating film and the like, on which OFF current can be made small and the manufacturing process can be simplified. CONSTITUTION:A first poolycrystalline semiconductor layer 2 is formed on an insulative substrate 1, and a gate electrode 5 is formed thereon through the first insulating film 3. A second insulating film 6 is formed on the gate electrode 5, and the second semiconductor layers 7a and 7b, where impurities are introduced in high density, are deposited on the first semiconductor layer 2 in such a manner that at least a part of the layers 7a and 7b is partially brought into contact with each other. A metal layer, which constitutes a source electrode and a drain electrode, is formed in contact with the divided second semiconductor layers 7a and 7b. As the second semiconductor layers are formed by deposition, high density ion doping with impurities is unnecessitated.</p> |
