发明名称 Schaltungsplatte.
摘要 Disclosed is an aluminum nitride thin film circuit board having an aluminum nitride substrate (1) and a conductive thin film pattern (3, 4) formed on the substrate (1). The conductive thin film pattern (3, 4) has a multi-layer structure selected from the group consisting of Ti/Ni/Au, Ti/Pd/Au, Ti/Pt/Au, Ni/Au, Cr/Au, and Cr/Cu/Au, and a boundary layer (2) of A l -N-M-O (M is Ti, Ni, or Cr) is formed between the substrate (1) and the conductive thin film pattern (3, 4). Since the boundary layer (2) is formed, bonding properties between the substrate (1) and the conductive thin film pattern (3, 4) are improved. In particular, when the boundary layer (2) contains 0.02 to 30 atomic% of oxygen, a higher bonding strength can be obtained.
申请公布号 DE68922118(T2) 申请公布日期 1995.10.12
申请号 DE1989622118T 申请日期 1989.01.24
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 YASUMOTO, TAKAAKI, MINATO-KU TOKYO 105, JP;IWASE, NOBUO, MINATO-KU TOKYO 105, JP
分类号 H01L23/15;H01L23/498;H05K1/03;H05K3/38;(IPC1-7):H01L23/14;H01L23/48 主分类号 H01L23/15
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