| 摘要 |
PURPOSE:To form a film pattern as fine as possible by patterning a silicon oxide film as a phase shifter and removing a resist from the part where the patterned silicon oxide film does not exist by a phase shifting method. CONSTITUTION:After forming an SOG(spin-on-glass) film 5 having such a thickness that can shift the phase of light by a half wavelength on a resist 4, a resist pattern is formed by developing a resist 6 after the resist 6 is exposed to a mask pattern by projecting the mask pattern upon the resist 6. Then the resist 6 is removed from a phase shifter 7 and the resist 4 is removed from the part where the phase shifter 7 is not formed by exposing the entire surface to light at a prescribed intensity and developing the exposed surface. Thereafter, a pattern is transferred to the resist 4 by exposing resist to light by a transmission type phase shifting method using the phase shifter 7. |
