| 摘要 |
PURPOSE:To provide an MIS transistor in which high integration and high performance can be realized. CONSTITUTION:An n-type impurity diffusion layer 3 is formed on the main surface of a p-type semiconductor substrate 1. First and second interlayer insulating layers 4, 6 and a gate electrode 5 are also formed on the main surface of the p-type semiconductor substrate 1. A first opening 7 is made through the first and second interlayer insulating films 4, 6 and the gate electrode 5. A laminate structure of an n-type silicon epitaxial layer 9, a p-type silicon epitaxial layer 10 and an n-type silicon epitaxial layer 11 is formed in the first opening 7. An embedded insulating layer 14 is formed at least in the p-type silicon epitaxial layer 10. |
