| 摘要 |
PURPOSE:To obtain a semiconductor light-emitting element which forms a Fabry- Perot cavity in an Al GaInN-based epitaxial crystal. CONSTITUTION:In an AlGaInN-based epitaxial crystal having a Wurtzite-type crystal structure, a groove is cut vertically in the face of the eptiaxial crystal, an epitaxial crystal is grown on side faces of the groove, and a good Fabry- Perot cavity is formed. Concretely, as shown in the figure, a groove 18 is dug in A GaInN-based crystal layers 12 to 16, a crystal growth layer 19 is formed on its sidewalls, and a flat reflecting face is formed. Thereby, it is possible to form the Fabry-Perot cavity in the AlGaInN-based epitaxial crystal, which has been difficult in conventional cases. |
