| 摘要 |
A low inductance coaxial semiconductor switching module (10) includes high power, high frequency semiconductor switching devices (10) operative to provide high power at low inductance. The module incorporates compositional, geometrical and electrical symmetry in a coaxial configuration, short internal leads, a special circumferential array of substrates, a special circular gate circuit, a special circular kelvin circuit, and special terminal subassembly and special module mounting features. <IMAGE> |
