ALLOY ELECTRODE AND SEMICONDUCTOR USING THE ALLOY ELECTRODE, AND MANUFACTURE OF ALLOY ELECTRODE

摘要

PURPOSE:To provide an alloy electrode which helps to decrease a defective rate of bonding and to provide a semiconductor device wherein the alloy electrode is used and to provide a method for making the alloy electrode. CONSTITUTION:An alloy electrode to be used for bonding is manufactured by depositing an Al-Si film 13 on a layer insulating film 12 formed on an Si substrate 11 and then conducting a heat treatment. On the layer insulating film 12, Si fine particles 13a of 0.5mum or above in diameter are deposited at the density of 150/900mum<2> but only the ones that have the diameter of 2.8mum or below are left behind on the film. This is achieved by setting a substrate temperature at the formation of the Al-Si film 13 and a heat-treatment temperature in the following process to specific ones. By this method, cracks are prevented from appearing in the layer insulating film 12 under the Al-Si film 13 and causing a bad insulation at the time of wire bonding.