Micro metal-wiring structure having stress induced migration resistance

摘要

A micro metal-wiring construction comprises a substrate having a first insulating layer thereon, a metal wiring formed on the first insulating layer of the substrate, and a second insulating layer covering the metal wiring. The coefficient of thermal expansion of the metal wiring is greater than those of the first and the second insulating layers. Intersection lines formed between grain boundaries of the metal wiring and a surface of the first insulating layer is nearly perpendicular to an extending direction of the metal wiring and an angle between grain boundary planes and a line that is perpendicular to a surface of the first insulating layer is greater than 20 degrees. Metal-wiring having a good resistance against stress-induced-migration is obtained by providing when this angle is greater than 20 DEG .