Semiconductor device with insulating film having trench

摘要

The semiconductor device has a semiconductor substrate (11) and an insulation film (14) on top of the substrate. The insulation film has a trench (16) with at least one side wall, inclined in the upper part of the trench. There is a conducting film on or in the trench, stretching along the trench, and the inclined side wall is built up from a second insulating film (20).