摘要 |
<p>In the present invention, a semiconductor integrated circuit device is constituted such that changes in the internal power source potential can be restricted even when an externally applied power source potential changes. The semiconductor integrated circuit device comprises an integrated circuit section (8), a voltage regulator (6) for limiting an external applied potential (VCC), which causes changes in potential levels, to a certain potential level to obtain a regulated potential ( phi D), and a boost circuit (5, 7) driven by the regulated potential ( phi D) as a power source, for boosting the regulated potential ( phi D) to a boosted potential ( phi P) used as a operating power source for the integrated circuit section (8). The boost circuit (5, 7) is driven by the regulated potential ( phi D) limited to a certain potential level. Even when the level of the potential VCC changes, operation of the boost circuit is not substantially changes. Due to the structure in which the boosted potential ( phi P) is generated from the regulated potential ( phi D), the constant potential range of the boosted potential ( phi P) is enlarged so that operating margins of the device is enlarged. <IMAGE></p> |