| 摘要 |
A method for metallizing semiconductor materials includes two processing steps. In the first step, a layer of an alloy of conductive metal, such as aluminum, and refractory metal, such as titanium, tungsten or silicon, is deposited on the surface in a single step from a single source. In the second step, a layer of the conductive metal is deposited over the alloy layer. Thus, using this method, metallization can be conveniently performed using two chambers.
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