发明名称 PATTERN FORMATION MATERIL
摘要 PURPOSE:To enhance sensitivity well as heat resistance, contrast, resolution, etc., by using a specified copolymer for a positive type resist material for use in ionizing radiation and ultraviolet lithography. CONSTITUTION:Methacrylic acid ester, and 2-20 mole % of a functional monomer, such as methacrylic acid containing a carboxylic group, and further, 0.4-3 mole % of an acid chloride, such as methacryloyl chloride are copolymerized, the percentage being based on the total monomer by molarity. At that time, the molar ratio of carboxylic group and acid chloride is kept within 2:1-25:1. This copolymer is dissolved in a solvent and coated on a substrate. Subsequent heating causes dehydrochlorination, bridge formation due to acid anhydride formation, conversion into a 3-dimensional network structure, and insolubilization in solvents. Then, a pattern is described by irradiation of ionizing radiation, and the part of pattern is selectively dissolved in a developing solvent.
申请公布号 JPS5466829(A) 申请公布日期 1979.05.29
申请号 JP19770133337 申请日期 1977.11.07
申请人 FUJITSU LTD 发明人 YONEDA YASUHIRO;KITAMURA TATEO;KITAKOUJI TOSHISUKE
分类号 G03F7/004;C08F20/00;C08F20/02;C08F20/26;C08F220/00;C08F220/04;C08F220/10;G03F7/039;H01L21/027 主分类号 G03F7/004
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