| 摘要 |
PURPOSE: To improve mechanical strength of a multilayer structure at a capacitor storage node and the adhesion of a conductive layer of the uppermost layer of the maltilayer structure at the stepped parts. CONSTITUTION: This device has a memory cell transistor comprising a gate electrode 33 formed on a semiconductor substrate 100 and a source/drain region 32, and a contact hole from which a certain part of the source/drain region 32 of the memory cell transistor is exposed, an insulating film 34 formed on the memory cell transistor being joined to the side of a conductive side wall 40 formed on an insulating film on the upper part of the contact hole. This device includes a capacitor storage node comprising a conductive multilayer film 37 formed horizontally outside the contact hole, and an upper layer conductive film 42 formed in the contact hole and along the conductive side wall and joined to the source or the drain of the memory cell transistor. |
